Narrow Linewidth and High Linearity DFB Laser Diode for Coherent Sensing
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Request a quoteThe narrow linewidth and high linearity DFB laser diode combines high coherence length and linear frequency modulation response characteristics. This monolithic DFB has been designed to withstand high current modulation bandwidth and it exhibits an intrinsically narrow linewidth. It represents a key building block to achieve cost-efficient coherent sensing systems that usually rely on expensive narrow linewidth lasers and external modulators.
(Picture: DFB/SiP Integrated Multi-wavelength Laser Engine)
TeraXion’s DFB laser diode key benefits:
- Low frequency noise and high linearity performances without relying on an external cavity, a complex laser driver scheme or an external frequency modulator.
- Compact semiconductor laser compatible with low-cost mass production processes.
- Direct current modulation further contributes to reducing the coherent sensing system’s complexity and power consumption.
TeraXion integrated the narrow linewidth and high linearity DFB laser diode into the LXM laser module to allow for quick coherent sensing system prototyping and proof of concept activities.
Applications:
- Automotive LiDAR for advanced driver assistance systems (ADAS) and autonomous driving (AD), levels 2 to 5
- High performance LiDAR based on coherent detection architectures (ex. FMCW LiDAR and Doppler LiDAR)
- Fiber optic distributed acoustic sensing (DAS)
- High precision metrology
To learn more about TeraXion's LXM, download our specsheet
LXM Laser Module Evaluation Kit
Top 4 Features
High Coherence Length
The narrow linewidth and high linearity DFB diode exhibits less than 20 kHz linewidth, for a coherence length around 5 kms.
Ultra-Compact and Stable
The narrow linewidth and high linearity DFB diode is a monolithic laser chip which does not rely on an external cavity to provide high coherence length.
Simple and Efficient Modulation
Direct current modulation of the narrow linewidth and high linearity DFB diode represents a simple and power-efficient method.
Scalability
The narrow linewidth and high linearity DFB diode epitaxy design allows for high throughput laser wafer production processes.
Critical technical specifications
| Label | Value |
|---|---|
Output Power |
Typ. 40 mW |
Wavelength |
1550 nm |
Instantaneous Linewidth, Standard Module |
< 20 kHz |
Instantaneous Linewidth, Ultra-Narrow Module |
< 0.25 kHz |
Frequency Modulation Amplitude* |
> 2 GHz |
Relative Intensity Noise at > 1 MHz |
< -155 dB |
*Limited to 200 MHz for the Ultra-Narrow Module